NT5AD512M16 - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
N.º da peça: NT5AD512M16 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $94.74 | $94,74 |
| 10 | $89.5 | $895,00 |
| 100 | $84.25 | $8.425,00 |
| 500 | $79 | $39.500,00 |
| 1.000 | $73.75 | $73.750,00 |
NT5AD512M16 Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher bandwidth and lower power consumption compared to DDR3. It achieves data rates of 1600 to 3200 MT/s, with a prefetch buffer of 8n, and operates at a standard voltage of 1.2V, reducing power by up to 40% versus DDR3L. DDR4 is the dominant memory technology for modern servers, desktops, laptops, and increasingly for embedded systems requiring high-speed data processing.
Key features of the NT5AD512M16 include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC error detection. These features enhance signal integrity, reliability, and ease of integration in high-speed systems. The device supports burst lengths of 8 and 4 (with burst chop), and programmable CAS latency, enabling optimization for specific performance requirements.
The NT5AD512M16 utilizes advanced DRAM process technology, achieving high density (8Gb) in a compact 96-ball FBGA package (approximately 9mm x 13mm). The package is optimized for high-speed signaling with minimal parasitic inductance and capacitance, supporting data rates up to 3200 Mbps. The device includes on-die termination (ODT) for improved signal integrity on the data bus, and supports write leveling for proper timing alignment in multi-rank systems.
Typical applications include high-performance computing, servers, networking equipment, industrial automation, and embedded systems requiring large memory capacity and high bandwidth. The commercial temperature grade (0°C to +95°C) suits consumer electronics, while the industrial grade (-40°C to +95°C) is ideal for harsh environments. The 512Mx16 organization is particularly suited for applications needing high density per chip, reducing board space and component count.
When designing with the NT5AD512M16, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet for impedance-controlled traces. The device requires a stable 1.2V VDD and 2.5V VPP supply, and the ZQ pin must be connected to a 240-ohm resistor to ground for calibration. Careful attention to signal integrity and power integrity is critical for reliable operation at 3200 Mbps.
Alternativas drop-in para NT5AD512M16 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT5AD512M16 (mesmo formato e footprint) — diferindo em Data Rate, Package, Density, Supply Voltage, Operating Temperature.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT5AD512M16C4-HR
✅ Drop-In✓ Em estoque
$43.1 / unidade
Ver ficha técnica →NT5AD512M16H4-JR
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NT5AD512M16A3-GZI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT40A512M16JY-07EAIT:B
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$8.1 / unidade
Ver ficha técnica →K4A8G165WB-BCTD
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$37 / unidade
Ver ficha técnica →H5AN8G6NDJR-XNC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$55.6818 / unidade
Ver ficha técnica →NT5AD512M16 Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Organização da memória | 512M x 16 |
| Total Density | 8 Gbit |
| Supply Voltage (VDD) | 1.2 V |
| Taxa de dados | 3200 Mbps (DDR4-3200) |
| Encapsulamento | 96-ball FBGA |
| Operating Temperature (Commercial) | 0°C to +95°C |
| Operating Temperature (Industrial) | -40°C to +95°C |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuração de pinos do NT5AD512M16
| Pino A1 | VDD — Power supply (1.2V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino B1 | DQ2 — Data input/output 2 |
| Pino B2 | DQ3 — Data input/output 3 |
| Pino B3 | VDDQ — DQ power supply |
| Pino C1 | DQ4 — Data input/output 4 |
| Pino C2 | DQ5 — Data input/output 5 |
| Pino C3 | VSSQ — DQ ground |
| Pino D1 | DQ6 — Data input/output 6 |
| Pino D2 | DQ7 — Data input/output 7 |
| Pino D3 | VDD — Power supply |
| Pino E1 | DQS0 — Data strobe 0 |
| Pino E2 | DQS0# — Data strobe 0 complement |
| Pino E3 | VSS — Ground |
| Pino F1 | DM0 — Data mask 0 |
| Pino F2 | VDDQ — DQ power supply |
| Pino F3 | DQ8 — Data input/output 8 |
| Pino G1 | DQ9 — Data input/output 9 |
| Pino G2 | DQ10 — Data input/output 10 |
| Pino G3 | VSSQ — DQ ground |
| Pino H1 | DQ11 — Data input/output 11 |
| Pino H2 | DQ12 — Data input/output 12 |
| Pino H3 | VDD — Power supply |
| Pino J1 | DQ13 — Data input/output 13 |
| Pino J2 | DQ14 — Data input/output 14 |
| Pino J3 | DQ15 — Data input/output 15 |
| Pino K1 | DQS1 — Data strobe 1 |
| Pino K2 | DQS1# — Data strobe 1 complement |
| Pino K3 | VSS — Ground |
| Pino L1 | DM1 — Data mask 1 |
| Pino L2 | VDDQ — DQ power supply |
| Pino L3 | VSSQ — DQ ground |
| Pino M1 | A0 — Address input 0 |
| Pino M2 | A1 — Address input 1 |
| Pino M3 | A2 — Address input 2 |
| Pino N1 | A3 — Address input 3 |
| Pino N2 | A4 — Address input 4 |
| Pino N3 | A5 — Address input 5 |
| Pino P1 | A6 — Address input 6 |
| Pino P2 | A7 — Address input 7 |
| Pino P3 | A8 — Address input 8 |
| Pino R1 | A9 — Address input 9 |
| Pino R2 | A10/AP — Address input 10 / Auto-precharge |
| Pino R3 | A11 — Address input 11 |
| Pino T1 | A12 — Address input 12 |
| Pino T2 | A13 — Address input 13 |
| Pino T3 | A14 — Address input 14 |
| Pino U1 | A15 — Address input 15 |
| Pino U2 | BA0 — Bank address 0 |
| Pino U3 | BA1 — Bank address 1 |
| Pino V1 | BA2 — Bank address 2 |
| Pino V2 | BG0 — Bank group 0 |
| Pino V3 | BG1 — Bank group 1 |
| Pino W1 | CK — Clock |
| Pino W2 | CK# — Clock complement |
| Pino W3 | CKE — Clock enable |
| Pino Y1 | CS# — Chip select |
| Pino Y2 | ODT — On-die termination |
| Pino Y3 | RAS# — Row address strobe |
| Pino AA1 | CAS# — Column address strobe |
| Pino AA2 | WE# — Write enable |
| Pino AA3 | RESET# — Reset |
| Pino AB1 | ZQ — Calibration reference |
| Pino AB2 | VPP — Wordline boost supply (2.5V) |
| Pino AB3 | VSS — Ground |
Aplicações típicas
NT5AD512M16 é adequado para 6 aplicaçãos: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Data Center Servers, Consumer Electronics.
High-Performance Computing
The NT5AD512M16 provides 8Gb density and 3200 Mbps data rate, making it ideal for HPC systems requiring large memory capacity and high bandwidth. Its 512Mx16 organization reduces chip count, saving board space. The device's low 1.2V operation minimizes power consumption in dense memory arrays, and features like CRC and write leveling ensure reliable data transfer at high speeds.
Recomendado
Networking Equipment
In networking switches and routers, the NT5AD512M16 offers high-speed packet buffering with 3200 Mbps data rate and 8Gb capacity. Its auto self-refresh and temperature sensor help maintain data integrity in thermally challenging environments. The 96-ball FBGA package is suitable for compact line cards, and the device's low power consumption reduces cooling requirements.
Recomendado
Industrial Automation
The industrial temperature grade (NT5AD512M16H4-JR) supports -40°C to +95°C, making it suitable for factory automation and control systems. The device's robust features like auto precharge and data mask ensure reliable operation in noisy environments. With 8Gb density, it can store large logs and application code, while the 1.2V supply reduces power in distributed I/O modules.
Recomendado
Embedded Systems
For embedded computing, the NT5AD512M16 provides high-density memory in a small 96-ball FBGA package, ideal for space-constrained designs. Its 512Mx16 organization simplifies routing and reduces PCB layers. The device supports DDR4-3200 for fast data access, and features like dynamic ODT improve signal integrity without external components.
Recomendado
Data Center Servers
In server memory modules, the NT5AD512M16 offers high density and bandwidth for virtualization and database workloads. Its 8Gb capacity allows higher module densities, and the 3200 Mbps data rate meets server performance requirements. The device's low power and thermal features help manage data center energy costs, while CRC ensures data integrity in critical applications.
Recomendado
Consumer Electronics
For high-end consumer devices like smart TVs and gaming consoles, the NT5AD512M16 provides fast memory for smooth graphics and multitasking. Its 1.2V operation reduces power in battery-powered devices, and the compact FBGA package fits slim designs. The commercial temperature grade covers typical consumer operating ranges, and features like write leveling ensure compatibility with various SoCs.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT5AD512M16 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT5AD512M16C4-HR | NT5AD512M16H4-JR | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Commercial (0°C to +95°C) | Commercial (0°C to +95°C) | Industrial (-40°C to +95°C) | Industrial (-40°C to +95°C) | Commercial (0°C to +95°C) |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Principais diferenciais
- High density in 16-bit organization (vs NT5AD512M8D3-HR)
- Industrial temperature grade option (vs MT40A512M16JY-07EAIT:B)
- Built-in temperature sensor and CRC (vs K4A8G165WB-BCTD)
Notas de projeto
The NT5AD512M16 requires a stable 1.2V VDD supply and a 2.5V VPP supply for wordline boost. Use low-impedance decoupling capacitors (0.1uF and 1uF) placed close to each VDD/VDDQ pin to minimize power supply noise. Ensure the power plane has low inductance and adequate copper pour to handle transient currents during read/write operations.
For DDR4-3200 operation, route all DQ, DQS, and address/control signals with controlled impedance (typically 40-50 ohms single-ended, 80-100 ohms differential). Maintain matched trace lengths within each byte lane to ensure timing skew is minimized. Follow the layout guidelines in the Nanya datasheet for the 96-ball FBGA package, including via placement and ground return paths.
The NT5AD512M16's power dissipation depends on operating frequency and activity. At 3200 Mbps, the device can dissipate up to [DATA_NEEDED: power dissipation] W. Ensure adequate airflow or a thermal pad is provided to keep the junction temperature within the specified range. The industrial grade supports up to +95°C case temperature, but proper thermal management is essential for reliability.
Informações de conformidade
RoHS compliance confirmed from JLCPCB listing. Other compliance data not explicitly provided.
