K4A8G085WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
Référence : K4A8G085WB-BIWE ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
K4A8G085WB-BIWE Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption by up to 25%. DDR4 is the industry standard for modern computing platforms, offering higher density, speed, and reliability.
Key features include a memory size of 8Gb, a data rate of 3200 Mbps, and a 1G x 8 organization. The device supports DLL-enabled mode for precise timing and includes on-die termination (ODT) for improved signal integrity. It operates over a temperature range of 0°C to +85°C, making it suitable for commercial and industrial applications.
The K4A8G085WB-BIWE uses Samsung's advanced B-die process technology, which provides excellent overclocking headroom and low latency. The device includes programmable CAS latency, burst length, and refresh rates, allowing system designers to optimize performance. The 78-ball FBGA package offers a small footprint and good thermal performance.
Typical applications include servers, networking equipment, industrial embedded systems, and high-performance computing platforms. The high density and speed make it ideal for memory-intensive tasks such as data analytics, virtualization, and real-time processing.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Follow the DDR4 layout guidelines for signal integrity, including impedance matching and length matching for data and address lines.
Alternatives de remplacement direct pour K4A8G085WB-BIWE — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4A8G085WB-BIWE (même facteur de forme et même empreinte) — différant par Data Rate, Package, Burst Length, Operating Temperature, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4A8G085WG-BIWE
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4A8G085WB-BCPB
✅ Remplacement direct✓ En stock
$13.7813 / unité
Voir la fiche technique →K4A8G085WB-BCTD
✅ Remplacement direct✓ En stock
$7.5 / unité
Voir la fiche technique →K4A8G085WB-BICH
✅ Remplacement direct✓ En stock
$4.96 / unité
Voir la fiche technique →K4A8G085WB-BCRC
✅ Remplacement direct✓ En stock
$6.8 / unité
Voir la fiche technique →H5AN8G6NAFR-UHC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.7422 / unité
Voir la fiche technique →MT40A512M16TB-062E:R
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$60 / unité
Voir la fiche technique →K4A8G085WB-BIWE Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 8 Gb |
| Memory Organization | 1G x 8 |
| Débit de données | 3200 Mbps |
| Tension d'alimentation | 1.2 V |
| Température de fonctionnement | 0°C to +85°C |
| Boîtier | 78-FBGA |
| Type de montage | Surface Mount |
| Memory Interface | Parallel |
| Refresh | Auto-refresh, self-refresh |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
Configuration des broches de K4A8G085WB-BIWE
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
Applications typiques
K4A8G085WB-BIWE convient pour 6 applications: Server Memory, Networking Equipment, Industrial Embedded Systems, High-Performance Computing, Consumer Electronics, Automotive Infotainment.
Server Memory
The K4A8G085WB-BIWE provides high-density 8Gb DDR4 memory for server applications, enabling large memory pools for virtualization, cloud computing, and data analytics. Its 3200 Mbps data rate and 1.2V operation deliver high bandwidth with low power consumption, making it ideal for enterprise servers where performance-per-watt is critical. The 78-FBGA package allows high-density DIMM designs, and the 1G x 8 organization supports ECC and advanced memory features.
Recommandé
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4A8G085WB-BIWE provides fast, reliable memory for packet buffering and routing tables. Its 3200 Mbps data rate ensures low-latency data processing, while the 1.2V supply reduces power dissipation in dense line cards. The 78-FBGA package is suitable for compact PCB layouts, and the 0°C to +85°C temperature range covers typical networking environments.
Recommandé
Industrial Embedded Systems
The K4A8G085WB-BIWE is well-suited for industrial embedded systems such as PLCs, HMI panels, and edge computing devices. Its 8Gb density provides ample memory for real-time control and data logging, while the 0°C to +85°C operating range ensures reliability in factory environments. The 1.2V operation reduces heat generation, and the 78-FBGA package allows for compact, rugged designs. The device's high speed supports fast data acquisition and processing.
Recommandé
High-Performance Computing
For high-performance computing (HPC) applications, the K4A8G085WB-BIWE delivers the bandwidth and capacity needed for complex simulations and data-intensive workloads. Its 3200 Mbps data rate and 8Gb density enable large memory footprints, while the 1.2V supply helps manage power in dense compute nodes. The 78-FBGA package supports high-speed signal integrity, and the device's low latency enhances overall system performance.
Recommandé
Consumer Electronics
In consumer electronics such as high-end routers, smart TVs, and gaming consoles, the K4A8G085WB-BIWE provides fast, efficient memory for smooth multitasking and media streaming. Its 8Gb density supports large applications, while the 3200 Mbps data rate ensures responsive performance. The 1.2V operation extends battery life in portable devices, and the 78-FBGA package enables slim form factors.
Recommandé
Automotive Infotainment
The K4A8G085WB-BIWE can be used in automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance features. Its 8Gb density supports complex user interfaces, while the 3200 Mbps data rate enables smooth video playback. The 0°C to +85°C temperature range covers automotive cabin environments, and the 1.2V operation reduces power consumption in vehicles.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4A8G085WB-BIWE — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4A8G085WG-BIWE | K4A8G085WB-BCPB | K4A8G085WB-BCTD | H5AN8G6NAFR-UHC | MT40A512M16TB-062E:R |
|---|---|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA | 78-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | SK Hynix | Micron Technology |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Memory Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C | 0°C to +95°C |
| Temperature Grade | Commercial | Commercial | Commercial | Commercial | Industrial | Industrial |
Principaux différenciateurs
- Samsung B-die process technology (vs H5AN8G6NAFR-UHC)
- Wide availability and ecosystem support (vs MT40A512M16TB-062E:R)
- Multiple temperature grade options (vs K4A8G085WB-BCPB)
Notes de conception
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and ensure low-impedance connections to VSS and VSSQ. Follow DDR4 layout guidelines for impedance matching (typically 40-50 ohms) and length matching for data and address lines.
Maintain proper signal integrity by using controlled impedance traces and minimizing stub lengths. Use on-die termination (ODT) settings as recommended in the datasheet to reduce reflections. Keep the clock and strobe lines length-matched to ensure proper timing.
Ensure adequate thermal management by providing sufficient copper area and airflow around the device. The 78-FBGA package has a thermal resistance that should be considered in high-temperature environments. Monitor junction temperature to stay within the specified operating range.
Informations de conformité
RoHS compliant per Samsung product page. Not AEC-Q100 qualified - this is a memory component, not an automotive IC.
