H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix
Référence : H5AN8G6NDJR-UHC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $45.11 | $45,11 |
| 10 | $42.5 | $425,00 |
| 100 | $39.8 | $3 980,00 |
| 500 | $37.2 | $18 600,00 |
| 1 000 | $34.6 | $34 600,00 |
H5AN8G6NDJR-UHC Présentation
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3 with higher density, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through on-die termination (ODT) and data bus inversion. As a volatile memory type, it stores data in capacitors that require periodic refreshing, and it transfers data on both edges of the clock signal, doubling throughput. DDR4 is the industry standard for main memory in servers, desktops, laptops, and high-performance embedded systems.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, power efficiency, and reliability in high-speed systems. The device supports a maximum operating temperature of 85°C and is lead-free and halogen-free, compliant with RoHS.
Architecturally, the H5AN8G6NDJR-UHC uses a 1x-nm class process technology, achieving high density with low power consumption. The 16-bit I/O configuration (x16) is ideal for applications requiring moderate bus width with high capacity per chip, reducing the number of devices needed on a memory module. The 96-ball FBGA package with a rectangular shape (JESD-30 code R-PBGA-B96) provides excellent thermal and electrical performance.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing systems, networking equipment, industrial PCs, and high-performance computing platforms. The 3200Mbps speed grade supports demanding workloads such as data analytics, virtualization, and real-time signal processing.
When designing with this device, ensure proper VDD (1.2V) and VDDQ decoupling with 0.1uF and 1uF capacitors placed close to the balls. Follow the JEDEC DDR4 layout guidelines for impedance matching and signal integrity, and use the ZQ pin with a 240-ohm resistor to ground for calibration.
Alternatives de remplacement direct pour H5AN8G6NDJR-UHC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G6NDJR-UHC (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Burst Length, Refresh.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G6NDJR-XNC
✅ Remplacement direct✓ En stock
$55.6818 / unité
Voir la fiche technique →H5AN8G6NAFR-UHC
✅ Remplacement direct✓ En stock
$5.7422 / unité
Voir la fiche technique →H5AN8G6NCJR-VKC
✅ Remplacement direct✓ En stock
$60 / unité
Voir la fiche technique →K4A8G165WC-BCRC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$23 / unité
Voir la fiche technique →MT40A512M16JY-075E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$30.5 / unité
Voir la fiche technique →AS4C512M16D4A-62BCN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.2 / unité
Voir la fiche technique →H5AN8G6NDJR-UHC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 512M x 16 |
| Speed Grade | 3200 Mbps (PC4-25600) |
| Supply Voltage (VDD) | 1.2 V |
| Supply Voltage (VDDQ) | 1.2 V |
| Number of Terminals | 96 |
| Boîtier | FBGA-96 (13x7.5 mm) |
| Package Shape | RECTANGULAR |
| JESD-30 Code | R-PBGA-B96 |
| Maximum Operating Temperature | 85 °C |
| Minimum Operating Temperature | 0 °C |
| RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling |
Configuration des broches de H5AN8G6NDJR-UHC
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply (1.2V) |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | DM0 — Data mask 0 |
| Broche E2 | DQS0 — Data strobe 0 |
| Broche E3 | DQS0# — Data strobe 0 complement |
| Broche F1 | VDD — Power supply (1.2V) |
| Broche F2 | VSS — Ground |
| Broche F3 | VDDQ — I/O power supply (1.2V) |
| Broche G1 | A0 — Address input 0 |
| Broche G2 | A1 — Address input 1 |
| Broche G3 | A2 — Address input 2 |
| Broche H1 | A3 — Address input 3 |
| Broche H2 | A4 — Address input 4 |
| Broche H3 | A5 — Address input 5 |
| Broche J1 | A6 — Address input 6 |
| Broche J2 | A7 — Address input 7 |
| Broche J3 | A8 — Address input 8 |
| Broche K1 | A9 — Address input 9 |
| Broche K2 | A10/AP — Address input 10 / Auto-precharge |
| Broche K3 | A11 — Address input 11 |
| Broche L1 | A12/BC — Address input 12 / Burst chop |
| Broche L2 | A13 — Address input 13 |
| Broche L3 | A14 — Address input 14 |
| Broche M1 | A15 — Address input 15 |
| Broche M2 | A16 — Address input 16 |
| Broche M3 | BA0 — Bank address 0 |
| Broche N1 | BA1 — Bank address 1 |
| Broche N2 | BG0 — Bank group 0 |
| Broche N3 | BG1 — Bank group 1 |
| Broche P1 | CK — Clock |
| Broche P2 | CK# — Clock complement |
| Broche P3 | CKE — Clock enable |
| Broche R1 | CS# — Chip select |
| Broche R2 | ODT — On-die termination |
| Broche R3 | RAS# — Row address strobe |
| Broche T1 | CAS# — Column address strobe |
| Broche T2 | WE# — Write enable |
| Broche T3 | RESET# — Reset |
| Broche U1 | ZQ — Calibration reference |
| Broche U2 | VDD — Power supply (1.2V) |
| Broche U3 | VSS — Ground |
Applications typiques
H5AN8G6NDJR-UHC convient pour 6 applications: Server Main Memory, Networking Equipment, Industrial PCs, High-Performance Computing, Embedded Systems, Consumer Electronics.
Server Main Memory
The H5AN8G6NDJR-UHC provides 8Gb density and 3200Mbps bandwidth, ideal for RDIMM and LRDIMM modules in servers. Its high speed supports data-intensive workloads like virtualization and cloud computing. The 1.2V operation reduces power consumption in data centers, while features like CRC and write leveling ensure reliable operation at high frequencies. When used in a dual-rank module, multiple devices can be combined to achieve capacities up to 64GB, meeting the demands of enterprise applications.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the H5AN8G6NDJR-UHC offers the high bandwidth needed for packet processing and routing tables. The 3200Mbps data rate enables fast lookup and forwarding, while the 8Gb density supports large routing tables and buffering. The device's low power consumption is critical for power-over-Ethernet (PoE) switches where thermal budgets are tight. Its FBGA-96 package allows compact board designs, and the auto self-refresh feature reduces standby power, extending equipment life in always-on network infrastructure.
Recommandé
Industrial PCs
For industrial PCs used in automation and control, the H5AN8G6NDJR-UHC provides reliable, high-speed memory in harsh environments. With a maximum operating temperature of 85°C, it suits factory floors and outdoor installations. The 8Gb density supports complex control algorithms and data logging, while the 3200Mbps speed ensures real-time responsiveness. The device's robust design, including CRC and write leveling, maintains data integrity in electrically noisy industrial settings. Its FBGA-96 package is compatible with standard industrial motherboards, enabling easy integration.
Recommandé
High-Performance Computing
In HPC clusters and workstations, the H5AN8G6NDJR-UHC delivers the memory bandwidth required for scientific simulations and data analytics. The 3200Mbps speed grade supports high-throughput computing, while the 8Gb density enables large datasets to reside in memory. The device's low latency and high reliability are essential for parallel processing workloads. Its 1.2V operation reduces power in large-scale systems, and the FBGA-96 package allows high-density DIMM designs. Features like dynamic ODT improve signal integrity at multi-GHz speeds, ensuring stable operation in demanding HPC environments.
Recommandé
Embedded Systems
The H5AN8G6NDJR-UHC is suitable for high-end embedded systems such as medical imaging, military, and aerospace applications. Its 8Gb density and 3200Mbps speed support real-time image processing and complex algorithms. The device's commercial temperature range (0-85°C) is adequate for many embedded environments, and its low power consumption is beneficial for battery-powered or thermally constrained designs. The FBGA-96 package is compact, enabling small form-factor boards. Features like auto self-refresh and ZQ calibration ensure reliable operation in embedded systems with varying power conditions.
Recommandé
Consumer Electronics
In high-end consumer devices like gaming PCs and workstations, the H5AN8G6NDJR-UHC provides the memory performance needed for gaming, content creation, and multitasking. The 3200Mbps speed ensures smooth frame rates and fast application loading, while the 8Gb density supports large games and creative software. The device's low power consumption is beneficial for laptops, extending battery life. Its FBGA-96 package is standard for SODIMM modules, enabling easy upgrades. Features like write leveling and dynamic ODT enhance stability in consumer systems with varying memory configurations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G6NDJR-UHC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G6NDJR-XNC | H5AN8G6NAFR-UHC | H5AN8G6NCJR-VKC | K4A8G165WC-BCRC | MT40A512M16JY-075E | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|---|
| Package | FBGA-96 (13x7.5mm) | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same | FBGA-96 (13x7.5mm) - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung | Micron | Alliance Memory |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Speed Grade | 3200 Mbps | 3200 Mbps | 3200 Mbps | 2666 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Max Operating Temperature | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Higher speed grade than VKC variant (vs H5AN8G6NCJR-VKC)
- Same-brand drop-in compatibility (vs H5AN8G6NDJR-XNC)
- Cross-brand availability (vs K4A8G165WC-BCRC)
Notes de conception
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the FBGA balls. Use a solid power plane for VDD and VDDQ to minimize impedance. The 1.2V supply should be regulated within +/-5% per JEDEC DDR4 specifications. Ensure adequate bulk capacitance on the module to handle transient currents during read/write bursts.
Follow JEDEC DDR4 layout guidelines for impedance matching (typically 40-50 ohms single-ended, 80-100 ohms differential). Route DQ, DQS, and address/control signals with matched trace lengths to minimize skew. Use ground planes between signal layers to reduce crosstalk. Place the ZQ pin's 240-ohm resistor to ground close to the device, as specified in the datasheet.
Use the dynamic ODT feature to optimize signal integrity by adjusting termination impedance during reads and writes. Enable write leveling to compensate for clock-to-strobe skew. Use the CRC feature to detect data corruption on the data bus. Ensure the memory controller is configured for the correct speed grade (3200Mbps) and timing parameters from the datasheet.
Informations de conformité
RoHS compliant, lead-free, and halogen-free per SK Hynix datasheet. REACH and conflict minerals status not specified in provided data.
