W634GU6RB09J - 4Gb DDR3L SDRAM x16 1066MHz | Winbond
Référence : W634GU6RB09J ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.9 | $4 450,00 |
| 1 000 | $8.1 | $8 100,00 |
W634GU6RB09J Présentation
DDR3L (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory (SDRAM) that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high throughput. DDR3L is backward-compatible with DDR3 and is widely used in laptops, servers, and industrial electronics where energy efficiency is critical.
Key features include a 4Gbit density, x16 organization, 1.067 GHz clock speed, and a CAS latency of 20 ns. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It operates over a temperature range of 0°C to +95°C (case temperature) and is RoHS compliant. The 96-VFBGA package measures 7.5x13mm with a 0.8mm ball pitch, enabling high-density PCB layouts.
Technically, the W634GU6RB09J uses a 30nm-class process technology, achieving low power and high speed. It features internal calibration for ZQ, write leveling, and read leveling to ensure signal integrity at high frequencies. The device supports auto-refresh and self-refresh modes, reducing standby power. Its low voltage operation and advanced power management make it suitable for battery-powered devices.
Typical applications include mobile computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and smart TVs. The high density and low power make it ideal for systems requiring large memory capacity with minimal energy consumption.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 1066MHz. The device requires a 1.35V supply and a separate VDDQ, which should be regulated accurately.
Alternatives de remplacement direct pour W634GU6RB09J — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec W634GU6RB09J (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, CAS Latency, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
W634GU6RB-09
✅ Remplacement direct✓ En stock
$9.69 / unité
Voir la fiche technique →W634GU6RB12J
✅ Remplacement direct✓ En stock
$6 / unité
Voir la fiche technique →W634GU6RB11J
✅ Remplacement direct✓ En stock
$9.5 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646D-BYK00
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.5 / unité
Voir la fiche technique →NT5CC256M16DP-DI
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.5 / unité
Voir la fiche technique →W634GU6RB09J Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4Gbit (256M x 16) |
| Débit de données | 1066 MHz (DDR3L-2133) |
| Tension d'alimentation | 1.35V |
| Latence CAS | 20 ns |
| Boîtier | 96-VFBGA (7.5x13mm) |
| Température de fonctionnement | 0°C to +95°C (Tc) |
| Interface | Parallel |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
| Organisation de la mémoire | 256M x 16 |
| Burst Length | 8 and 4 |
| Nombre de broches | 96 |
| Ball Pitch | 0.8 mm |
Configuration des broches de W634GU6RB09J
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | VSS — Ground |
| Broche B1 | DQ1 — Data input/output 1 |
| Broche B2 | VDDQ — I/O power supply |
| Broche B3 | DQ2 — Data input/output 2 |
| Broche C1 | DQ3 — Data input/output 3 |
| Broche C2 | VSSQ — I/O ground |
| Broche C3 | DQ4 — Data input/output 4 |
| Broche D1 | DQ5 — Data input/output 5 |
| Broche D2 | VDD — Power supply |
| Broche D3 | DQ6 — Data input/output 6 |
| Broche E1 | DQ7 — Data input/output 7 |
| Broche E2 | VSS — Ground |
| Broche E3 | DQS0 — Data strobe 0 |
| Broche F1 | DQS0# — Data strobe 0 complement |
| Broche F2 | VDDQ — I/O power supply |
| Broche F3 | A0 — Address input 0 |
| Broche G1 | A1 — Address input 1 |
| Broche G2 | VSS — Ground |
| Broche G3 | A2 — Address input 2 |
| Broche H1 | A3 — Address input 3 |
| Broche H2 | VDD — Power supply |
| Broche H3 | A4 — Address input 4 |
| Broche J1 | A5 — Address input 5 |
| Broche J2 | VSS — Ground |
| Broche J3 | A6 — Address input 6 |
| Broche K1 | A7 — Address input 7 |
| Broche K2 | VDDQ — I/O power supply |
| Broche K3 | A8 — Address input 8 |
| Broche L1 | A9 — Address input 9 |
| Broche L2 | VSS — Ground |
| Broche L3 | A10 — Address input 10 |
| Broche M1 | A11 — Address input 11 |
| Broche M2 | VDD — Power supply |
| Broche M3 | A12 — Address input 12 |
| Broche N1 | BA0 — Bank address 0 |
| Broche N2 | VSS — Ground |
| Broche N3 | BA1 — Bank address 1 |
| Broche P1 | BA2 — Bank address 2 |
| Broche P2 | VDDQ — I/O power supply |
| Broche P3 | RAS# — Row address strobe |
| Broche R1 | CAS# — Column address strobe |
| Broche R2 | VSS — Ground |
| Broche R3 | WE# — Write enable |
| Broche T1 | CS# — Chip select |
| Broche T2 | VDD — Power supply |
| Broche T3 | CKE — Clock enable |
| Broche U1 | ODT — On-die termination |
| Broche U2 | VSS — Ground |
| Broche U3 | CK — Clock |
| Broche V1 | CK# — Complementary clock |
| Broche V2 | VDDQ — I/O power supply |
| Broche V3 | RESET# — Reset |
Applications typiques
W634GU6RB09J convient pour 6 applications: Mobile Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Embedded Systems.
Mobile Computing
The W634GU6RB09J's low 1.35V operation and 4Gbit density make it ideal for laptops, tablets, and ultrabooks where power efficiency and compact size are critical. Its 1066MHz data rate supports smooth multitasking and responsive performance. The 96-VFBGA package saves PCB space, enabling thinner designs. With a 20ns CAS latency, it provides fast access to frequently used data, enhancing user experience.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB09J provides high-bandwidth memory for packet buffering and routing tables. Its 1066MHz data rate ensures low-latency data transfer, while the 4Gbit capacity supports large forwarding databases. The low power consumption reduces heat generation in dense networking hardware. The device's on-die termination and write leveling features maintain signal integrity at high speeds, crucial for reliable network operation.
Recommandé
Industrial Automation
The W634GU6RB09J is suitable for industrial controllers and PLCs that require reliable, high-speed memory for real-time data processing. Its wide operating temperature range (0°C to +95°C) ensures performance in harsh environments. The 4Gbit density allows for extensive data logging and complex control algorithms. The low voltage operation reduces power consumption in 24/7 operation, and the compact package fits into space-limited control modules.
Recommandé
Consumer Electronics
For smart TVs, set-top boxes, and gaming consoles, the W634GU6RB09J offers the memory bandwidth needed for high-definition video streaming and gaming. Its 1066MHz speed supports smooth graphics rendering, while the 4Gbit capacity handles multiple applications simultaneously. The low power consumption is beneficial for energy-efficient consumer devices. The small VFBGA package enables slim product designs, and the RoHS compliance meets environmental regulations.
Recommandé
Automotive Infotainment
The W634GU6RB09J is used in automotive infotainment systems for navigation, audio, and video playback. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 4Gbit density supports large map databases and media files. The device's temperature range is suitable for cabin environments. The high data rate ensures responsive user interfaces, and the compact package fits into dashboard electronics.
Recommandé
Embedded Systems
In embedded systems like single-board computers and IoT gateways, the W634GU6RB09J provides high-capacity memory for running operating systems and applications. Its low power consumption is ideal for battery-powered devices, and the 1066MHz speed ensures responsive performance. The 96-VFBGA package is suitable for compact embedded boards. The device's self-refresh mode reduces standby power, extending battery life in portable embedded systems.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour W634GU6RB09J — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | W634GU6RB-09 | W634GU6RB12J | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Winbond | Winbond | Winbond | Micron | Samsung |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 1066 MHz | 1066 MHz | 1200 MHz | 1066 MHz | 1066 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| CAS Latency | 20 ns | 20 ns | 15 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Low voltage operation (vs MT41K256M16HA-125)
- Higher speed grade option (vs W634GU6RB-09)
- Compact package (vs K4B4G1646D-BYK0)
Notes de conception
For reliable operation at 1066MHz, ensure controlled impedance traces for DQ, DQS, and address/command lines. Use 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within ±0.5mm for data lines and ±1mm for address/command. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The W634GU6RB09J operates up to +95°C case temperature. In high-ambient environments, ensure adequate airflow or a heatsink. The 96-VFBGA package has a thermal resistance of approximately 20°C/W (theta_JA). For a 1W power dissipation, the junction temperature rise is 20°C above ambient. Monitor the case temperature to stay within limits.
Use on-die termination (ODT) settings to match the memory bus impedance. For point-to-point connections, set ODT to 40 ohms. For multi-rank configurations, adjust ODT dynamically. Implement write leveling and read leveling as per JEDEC DDR3L specifications to compensate for clock skew. Keep the clock and strobe traces length-matched to avoid setup/hold violations.
Informations de conformité
Winbond states all Flash products are Halogen-Free and RoHS compliant. AEC-Q100 not applicable for this commercial-grade part.
