2EDL900G3XTMA1 vs 2EDL8034G4CXTMA1 तुलना
विस्तृत दोनों ओर की तुलना 2EDL900G3XTMA1 द्वारा Infineon और 2EDL8034G4CXTMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
2EDL900G3XTMA1 - 120V Dual Half-Bridge Gate Driver 4A/6A | Infineon
2EDL900G3XTMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | 2EDL900G3XTMA1 | 2EDL8034G4CXTMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | Power MOSFET Drivers | Power MOSFET Drivers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Product Type | Dual-channel level-shift gate driver IC | — |
| Topology Supported | Half-bridge, high-side, low-side | — |
| Isolation Type | Junction isolation (JI), 120 V | Junction-isolated (level-shifted) |
| Number of Channels | 2 (high-side + low-side) | — |
| Peak Source Current | 4 A | 3 A |
| Peak Sink Current | 6 A | 4 A |
| Drive Output Voltage Range | 4 V to 16 V | — |
| Supply Voltage (VDD/VBS) | 4 V to 16 V | — |
| Switching Device Supported | Si MOSFET, enhancement-mode GaN FET | — |
| Configurable Deadtime | Yes (programmable) | — |
| Integrated Current Sense Amplifier | Yes | — |
| PWM Modes | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted | — |
| Input Logic Compatibility | 3.3 V / 5 V / TTL (per datasheet) | 3.3 V / 5 V |
| पैकेज | TSNP-16 (3x3 mm) with exposed pad | PG-VDSON-10-2 (DSN-10) with exposed pad |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| ऑपरेटिंग तापमान रेंज | -40 C to +125 C | — |
| MSL स्तर | 1 | [DATA_NEEDED: MSL level] |
| RoHS स्थिति | Compliant | — |
| Driver Type | — | Half-Bridge (High-Side / Low-Side) |
| Configuration | — | Non-Inverting |
| Bootstrap Voltage (Max) | — | 120 V |
| आउटपुट की संख्या | — | 2 |
| Rise Time (Typical) | — | [DATA_NEEDED: rise time ns] |
| Fall Time (Typical) | — | [DATA_NEEDED: fall time ns] |
| Propagation Delay (Typical) | — | [DATA_NEEDED: propagation delay ns] |
| VCC Supply Voltage | — | [DATA_NEEDED: VCC range V] |
| UVLO Protection | — | Yes (VCC and VBS) |
| ESD Rating (HBM) | — | [DATA_NEEDED: ESD HBM kV] |
| ऑपरेटिंग जंक्शन तापमान | — | -40 C to +125 C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |