2EDL900G3XTMA1 vs 2EDL8034G4CXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2EDL900G3XTMA1 disebabkan oleh Infineon dan 2EDL8034G4CXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2EDL900G3XTMA1 2EDL8034G4CXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Junction-isolated (level-shifted)
Number of Channels 2 (high-side + low-side) —
Peak Source Current 4 A 3 A
Peak Sink Current 6 A 4 A
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) 3.3 V / 5 V
Kemasan TSNP-16 (3x3 mm) with exposed pad PG-VDSON-10-2 (DSN-10) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40 C to +125 C —
Aras MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant —
Driver Type — Half-Bridge (High-Side / Low-Side)
Configuration — Non-Inverting
Bootstrap Voltage (Max) — 120 V
Bilangan Output — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
Suhu Hubungan Operasi — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

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