2EDL900G3XTMA1 vs 2EDL8034G4CXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL900G3XTMA1 dari Infineon dan 2EDL8034G4CXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL900G3XTMA1 2EDL8034G4CXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Junction-isolated (level-shifted)
Number of Channels 2 (high-side + low-side) —
Peak Source Current 4 A 3 A
Peak Sink Current 6 A 4 A
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) 3.3 V / 5 V
Paket TSNP-16 (3x3 mm) with exposed pad PG-VDSON-10-2 (DSN-10) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40 C to +125 C —
Level MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant —
Driver Type — Half-Bridge (High-Side / Low-Side)
Configuration — Non-Inverting
Bootstrap Voltage (Max) — 120 V
Jumlah Output — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
Suhu Hubung Kerja — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

Spek dan Sumber

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