2EDL900G3XTMA1 vs 2EDL8034G4CXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL900G3XTMA1 sa pamamagitan ng Infineon at 2EDL8034G4CXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2EDL8034G4CXTMA1 2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon

2EDL8034G4CXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2EDL900G3XTMA1 2EDL8034G4CXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Junction-isolated (level-shifted)
Number of Channels 2 (high-side + low-side) —
Peak Source Current 4 A 3 A
Peak Sink Current 6 A 4 A
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) 3.3 V / 5 V
Packhaging TSNP-16 (3x3 mm) with exposed pad PG-VDSON-10-2 (DSN-10) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40 C to +125 C —
Level ng MSL 1 [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant —
Driver Type — Half-Bridge (High-Side / Low-Side)
Configuration — Non-Inverting
Bootstrap Voltage (Max) — 120 V
Bilang ng Outputs — 2
Rise Time (Typical) — [DATA_NEEDED: rise time ns]
Fall Time (Typical) — [DATA_NEEDED: fall time ns]
Propagation Delay (Typical) — [DATA_NEEDED: propagation delay ns]
VCC Supply Voltage — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (VCC and VBS)
ESD Rating (HBM) — [DATA_NEEDED: ESD HBM kV]
Temperature ng Junction na Operasyon — -40 C to +125 C
Lead-Free / RoHS — Yes (per Infineon product page)

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