BTS5215LAUMA1 vs BTS621L1E3128ABUMA1 तुलना
विस्तृत दोनों ओर की तुलना BTS5215LAUMA1 द्वारा Infineon और BTS621L1E3128ABUMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | BTS5215LAUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | Power MOSFET Drivers | Power MOSFET Drivers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Product Type | Smart High-Side Power Switch | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 | 2 (dual high-side, 1:1) |
| On-State Resistance (RDS(on)) | 90 mΩ typical per channel | — |
| Continuous Output Current per Channel | 3.7 A | — |
| Operating Voltage Range | 8 V to 36 V | — |
| Standby Current | Very low (datasheet value [DATA_NEEDED: standby current uA]) | — |
| Input Logic Compatibility | CMOS-compatible, ground-referenced | CMOS-compatible, ground-referenced |
| Diagnostic Feedback | Status feedback per channel | Yes - open-load and overtemperature reporting |
| MOSFET Technology | N-channel vertical power MOSFET with charge pump | — |
| Load Type Support | Resistive and inductive loads | — |
| Protection Features | Overcurrent, overtemperature, overvoltage, short-circuit, undervoltage | — |
| Demagnetization | Fast demagnetization of inductive loads | — |
| पैकेज | PG-DSO-12-9 | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| ऑपरेटिंग तापमान | -40C to +150C (TJ) [DATA_NEEDED: ambient range exact] | — |
| RoHS स्थिति | Compliant | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| ऑपरेटिंग तापमान रेंज | — | -40 °C to +150 °C junction |
| माउंटिंग प्रकार | — | Surface Mount |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| Technology | — | Smart SIPMOS (monolithic) |
| RoHS / Lead-Free | — | Compliant (Pb-free) |