1ED3124MU12HXUMA1 vs 1EDI60N12AFXUMA1 Perbandingan

Perbandingan bersamaan detil 1ED3124MU12HXUMA1 dari Infineon dan 1EDI60N12AFXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED3124MU12HXUMA1 1EDI60N12AFXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Single-channel isolated gate driver IC —
Manufacturer Family EiceDRIVER Compact 1ED31xxMU12H (X3 compact) —
Peak Output Current (source/sink) 14 A typical —
Konfigurasi Output Separate source and sink pins —
Galvanic Isolation (rms) 5.7 kV (UL 1577) —
Working Voltage (continuous) 1200 V —
Common-Mode Transient Immunity (CMTI) 200 kV/us minimum —
Propagation Delay (typ.) 90 ns 120 ns
UVLO Threshold 10.5 V —
Isolation Technology Coreless transformer (CT) —
Paket PG-DSO-8-66 (DSO-8 wide-body) PG-DSO-8-51 (DSO-8)
Creepage Distance >8 mm —
Rentang Suhu Kerja -40C to +125C —
Target Switch Types IGBT, power MOSFET, SiC MOSFET —
Recommended Switch Class Up to 2300 V IGBT / SiC modules —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL2 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Driver Configuration — Single high-side, galvanically isolated
Number of Channels — 1
Isolation Type — Magnetic (coreless transformer)
Isolation Voltage — 1200 V working voltage
Maximum Output Voltage — 40 V
Source Current (typ.) — 10 A
Sink Current (typ.) — 9.4 A
Supply Voltage (VDD) — 3.1 V to 17 V
Input Logic Compatibility — 3.3 V and 5 V CMOS/TTL
Creepage Distance (min.) — 4 mm
Short-Circuit Clamping — Yes (separate sink/source outputs)
Suhu Kerja — -40C to +125C

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