1ED3124MU12HXUMA1 vs 1EDI60N12AFXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3124MU12HXUMA1 sa pamamagitan ng Infineon at 1EDI60N12AFXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1ED3124MU12HXUMA1 1EDI60N12AFXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Single-channel isolated gate driver IC —
Manufacturer Family EiceDRIVER Compact 1ED31xxMU12H (X3 compact) —
Peak Output Current (source/sink) 14 A typical —
Output Kumpigurasyon Separate source and sink pins —
Galvanic Isolation (rms) 5.7 kV (UL 1577) —
Working Voltage (continuous) 1200 V —
Common-Mode Transient Immunity (CMTI) 200 kV/us minimum —
Propagation Delay (typ.) 90 ns 120 ns
UVLO Threshold 10.5 V —
Isolation Technology Coreless transformer (CT) —
Packhaging PG-DSO-8-66 (DSO-8 wide-body) PG-DSO-8-51 (DSO-8)
Creepage Distance >8 mm —
Hanay ng Temperature na Operasyon -40C to +125C —
Target Switch Types IGBT, power MOSFET, SiC MOSFET —
Recommended Switch Class Up to 2300 V IGBT / SiC modules —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL2 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant
Driver Configuration — Single high-side, galvanically isolated
Number of Channels — 1
Isolation Type — Magnetic (coreless transformer)
Isolation Voltage — 1200 V working voltage
Maximum Output Voltage — 40 V
Source Current (typ.) — 10 A
Sink Current (typ.) — 9.4 A
Supply Voltage (VDD) — 3.1 V to 17 V
Input Logic Compatibility — 3.3 V and 5 V CMOS/TTL
Creepage Distance (min.) — 4 mm
Short-Circuit Clamping — Yes (separate sink/source outputs)
Temperature na Operasyon — -40C to +125C

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