1ED44175N01BXTSA1 vs 1ED3124MC12HXUMA1 Perbandingan
Perbandingan bersamaan detil 1ED44175N01BXTSA1 dari Infineon dan 1ED3124MC12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
1ED44175N01BXTSA1 - 25V 2.6A Low-Side IGBT Gate Driver | Infineon
1ED44175N01BXTSA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | 1ED44175N01BXTSA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | Low-side gate driver | — |
| Number of Channels | 1 | — |
| Gate Type | IGBT, MOSFET (single-channel) | — |
| Configuration | Non-inverting | High-side / Low-side (non-inverting) |
| Output Current (Source/Sink) | 2.6 A typical | — |
| Supply Voltage Range | Up to 25 V | — |
| Logic Input Compatibility | CMOS, LSTTL | — |
| Over-Current Protection (OCP) | Integrated (OCP pin) | — |
| FAULT Output | Yes (status reporting) | — |
| Tombol Aktifkan | Yes | — |
| Rise/Fall Time | [DATA_NEEDED: rise/fall time ns] | — |
| Propagation Delay | [DATA_NEEDED: propagation delay ns] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Paket | PG-SOT23-6-3 (6-lead) | PG-DSO-8 (DSO-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | CMOS (latch-up immune) | — |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Number of Drivers | — | 1 |
| Jumlah Output | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Waktu naik | — | 15 ns |
| Waktu Menurun | — | 30 ns |
| Suhu Kerja | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |