1ED44175N01BXTSA1 vs 1ED3124MC12HXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 1ED44175N01BXTSA1 disebabkan oleh Infineon dan 1ED3124MC12HXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
1ED44175N01BXTSA1 - 25V 2.6A Low-Side IGBT Gate Driver | Infineon
1ED44175N01BXTSA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | 1ED44175N01BXTSA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | Low-side gate driver | — |
| Number of Channels | 1 | — |
| Gate Type | IGBT, MOSFET (single-channel) | — |
| Configuration | Non-inverting | High-side / Low-side (non-inverting) |
| Output Current (Source/Sink) | 2.6 A typical | — |
| Supply Voltage Range | Up to 25 V | — |
| Logic Input Compatibility | CMOS, LSTTL | — |
| Over-Current Protection (OCP) | Integrated (OCP pin) | — |
| FAULT Output | Yes (status reporting) | — |
| Pin penggunaan | Yes | — |
| Rise/Fall Time | [DATA_NEEDED: rise/fall time ns] | — |
| Propagation Delay | [DATA_NEEDED: propagation delay ns] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Kemasan | PG-SOT23-6-3 (6-lead) | PG-DSO-8 (DSO-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS (latch-up immune) | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | Compliant |
| Channel Type | — | Single-channel |
| Number of Drivers | — | 1 |
| Bilangan Output | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Masa Pertambahan | — | 15 ns |
| Masa jatuh | — | 30 ns |
| Suhu Operasi | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |