1ED44175N01BXTSA1 vs 1ED3124MC12HXUMA1 比較

詳細並排比較 1ED44175N01BXTSA1 由 Infineon 與 1ED3124MC12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 啟用中

規格比較

參數 1ED44175N01BXTSA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Low-side gate driver —
Number of Channels 1 —
Gate Type IGBT, MOSFET (single-channel) —
Configuration Non-inverting High-side / Low-side (non-inverting)
Output Current (Source/Sink) 2.6 A typical —
Supply Voltage Range Up to 25 V —
Logic Input Compatibility CMOS, LSTTL —
Over-Current Protection (OCP) Integrated (OCP pin) —
FAULT Output Yes (status reporting) —
致能腳位 Yes —
Rise/Fall Time [DATA_NEEDED: rise/fall time ns] —
Propagation Delay [DATA_NEEDED: propagation delay ns] —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
封裝 PG-SOT23-6-3 (6-lead) PG-DSO-8 (DSO-8)
安裝類型 Surface Mount Surface Mount
Technology CMOS (latch-up immune) —
MSL 等級 [DATA_NEEDED: MSL level] —
RoHS 狀態 Compliant Compliant
Channel Type — Single-channel
Number of Drivers — 1
輸出數量 — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升時間 — 15 ns
下降時間 — 30 ns
工作溫度 — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

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