1ED44176N01FXUMA1 vs 1EDN7116GXTMA1 Perbandingan

Perbandingan bersamaan detil 1ED44176N01FXUMA1 dari Infineon dan 1EDN7116GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1ED44176N01FXUMA1 1EDN7116GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Low-side gate driver with integrated OCP, FAULT, EN Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Configuration Non-inverting, single-channel, low-side —
Number of Channels 1 —
Input Compatibility CMOS, TTL —
VCC Supply Voltage Range 4.5 V to 25 V —
Peak Source Current (typ.) 0.8 A —
Peak Sink Current (typ.) 1.75 A —
Propagation Delay (typ.) 50 ns —
OCP Threshold Tolerance ±5% —
OCP Reference 800 mV to 1.2 V (per LCSC listing) —
Enable Input Yes (EN, active-high) —
Fault Output Yes (FAULT, open-drain) —
Suhu Kerja -40 C to +125 C —
Paket 8-pin PG-DSO8 (SOIC-8) PG-VSON-10-4 (3.0 mm × 3.0 mm)
Tipe Mounting Surface Mount Surface Mount
Family EiceDRIVER —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] MSL3
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
Rentang Suhu Kerja — -40 °C to +125 °C
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

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