1ED44176N01FXUMA1 vs 1EDN7116GXTMA1 比較

詳細並排比較 1ED44176N01FXUMA1 由 Infineon 與 1EDN7116GXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1ED44176N01FXUMA1 1EDN7116GXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Low-side gate driver with integrated OCP, FAULT, EN Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Configuration Non-inverting, single-channel, low-side —
Number of Channels 1 —
Input Compatibility CMOS, TTL —
VCC Supply Voltage Range 4.5 V to 25 V —
Peak Source Current (typ.) 0.8 A —
Peak Sink Current (typ.) 1.75 A —
Propagation Delay (typ.) 50 ns —
OCP Threshold Tolerance ±5% —
OCP Reference 800 mV to 1.2 V (per LCSC listing) —
Enable Input Yes (EN, active-high) —
Fault Output Yes (FAULT, open-drain) —
工作溫度 -40 C to +125 C —
封裝 8-pin PG-DSO8 (SOIC-8) PG-VSON-10-4 (3.0 mm × 3.0 mm)
安裝類型 Surface Mount Surface Mount
Family EiceDRIVER —
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL level] MSL3
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
工作溫度範圍 — -40 °C to +125 °C
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

資料表與資源

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