1ED44176N01FXUMA1 vs 1EDN7116GXTMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1ED44176N01FXUMA1 sa pamamagitan ng Infineon at 1EDN7116GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED44176N01FXUMA1 - 25V 1-Channel Low-Side Gate Driver IC | Infineon
1ED44176N01FXUMA1 ✓ NakahandaInfineon
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1ED44176N01FXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Fungsi | Low-side gate driver with integrated OCP, FAULT, EN | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Configuration | Non-inverting, single-channel, low-side | — |
| Number of Channels | 1 | — |
| Input Compatibility | CMOS, TTL | — |
| VCC Supply Voltage Range | 4.5 V to 25 V | — |
| Peak Source Current (typ.) | 0.8 A | — |
| Peak Sink Current (typ.) | 1.75 A | — |
| Propagation Delay (typ.) | 50 ns | — |
| OCP Threshold Tolerance | ±5% | — |
| OCP Reference | 800 mV to 1.2 V (per LCSC listing) | — |
| Enable Input | Yes (EN, active-high) | — |
| Fault Output | Yes (FAULT, open-drain) | — |
| Temperature na Operasyon | -40 C to +125 C | — |
| Packhaging | 8-pin PG-DSO8 (SOIC-8) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Family | EiceDRIVER | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | MSL3 |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Hanay ng Temperature na Operasyon | — | -40 °C to +125 °C |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |