1EDB9275FXUMA1 vs 1ED020I12B2XUMA1 Perbandingan

Perbandingan bersamaan detil 1EDB9275FXUMA1 dari Infineon dan 1ED020I12B2XUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDB9275FXUMA1 1ED020I12B2XUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Isolated single-channel gate driver (high-side, inverting) —
Number of Channels 1 1
Konfigurasi Output High-side half-bridge —
Peak Source/Sink Current 9 A —
Input Voltage (VDD) 3 V to 15 V —
Isolation Voltage (Vrms) 3 kVrms 4500 Vrms
Common-Mode Transient Immunity (CMTI) 300 V/ns —
Clamping Response Time 20 ns —
Propagation Delay [DATA_NEEDED: propagation delay value] —
Input Logic Inverting —
Rentang Suhu Kerja -40 C to +125 C —
Paket PG-DSO-8 (150 mil) PG-DSO-16-15 (300 mil wide-body DSO-16)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] MSL-3 (per JEDEC J-STD-020)
Status RoHS Compliant —
Isolation Technology Coreless transformer (CT) Coreless transformer (magnetic coupling)
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
Suhu Kerja — -40 °C to +125 °C
Compliance — RoHS compliant

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