1EDB9275FXUMA1 vs 1ED020I12B2XUMA1 比較

詳細並排比較 1EDB9275FXUMA1 由 Infineon 與 1ED020I12B2XUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1EDB9275FXUMA1 1ED020I12B2XUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Isolated single-channel gate driver (high-side, inverting) —
Number of Channels 1 1
輸出配置 High-side half-bridge —
Peak Source/Sink Current 9 A —
Input Voltage (VDD) 3 V to 15 V —
Isolation Voltage (Vrms) 3 kVrms 4500 Vrms
Common-Mode Transient Immunity (CMTI) 300 V/ns —
Clamping Response Time 20 ns —
Propagation Delay [DATA_NEEDED: propagation delay value] —
Input Logic Inverting —
工作溫度範圍 -40 C to +125 C —
封裝 PG-DSO-8 (150 mil) PG-DSO-16-15 (300 mil wide-body DSO-16)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] MSL-3 (per JEDEC J-STD-020)
RoHS 狀態 Compliant —
Isolation Technology Coreless transformer (CT) Coreless transformer (magnetic coupling)
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
工作溫度 — -40 °C to +125 °C
Compliance — RoHS compliant

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