1EDB9275FXUMA1 vs 1ED020I12B2XUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDB9275FXUMA1 disebabkan oleh Infineon dan 1ED020I12B2XUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDB9275FXUMA1 1ED020I12B2XUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Isolated single-channel gate driver (high-side, inverting) —
Number of Channels 1 1
Konfigurasi Output High-side half-bridge —
Peak Source/Sink Current 9 A —
Input Voltage (VDD) 3 V to 15 V —
Isolation Voltage (Vrms) 3 kVrms 4500 Vrms
Common-Mode Transient Immunity (CMTI) 300 V/ns —
Clamping Response Time 20 ns —
Propagation Delay [DATA_NEEDED: propagation delay value] —
Input Logic Inverting —
Gambaran Suhu Operasi -40 C to +125 C —
Kemasan PG-DSO-8 (150 mil) PG-DSO-16-15 (300 mil wide-body DSO-16)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] MSL-3 (per JEDEC J-STD-020)
Status RoHS Compliant —
Isolation Technology Coreless transformer (CT) Coreless transformer (magnetic coupling)
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
Suhu Operasi — -40 °C to +125 °C
Compliance — RoHS compliant

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