1EDN7136UXTSA1 vs 1EDN7136GXTMA1 Perbandingan
Perbandingan bersamaan detil 1EDN7136UXTSA1 dari Infineon dan 1EDN7136GXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDN7136UXTSA1 | 1EDN7136GXTMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Fungsi | High-side / Low-side gate driver IC | — |
| Driven Device Type | GaN HEMT, N-channel MOSFET | — |
| Jumlah Output | 2 (high-side and low-side) | — |
| Peak Source Current | 1 A | 4 A |
| Peak Sink Current | 2 A | 8 A |
| Driver Supply Voltage (Max) | 200 V | — |
| Logic Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Input Type | Truly Differential Input (TDI) | — |
| Active Miller Clamp | Yes (integrated) | — |
| Under-Voltage Lockout (UVLO) | Yes (driver supply and logic input) | — |
| Propagation Delay (Typ) | [DATA_NEEDED: propagation delay value] | — |
| Rentang Suhu Kerja | -40 C to +150 C | — |
| Paket | TSNP-6 with exposed pad (PG-VSON-1) | PG-VSON-10-4 (leadless, thermal pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes (per Infineon product family convention) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Type | — | Low-side gate driver IC |
| Configuration | — | Single channel, non-inverting |
| Target Switch | — | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | — | TTL/CMOS compatible |
| UVLO | — | Yes (VDD under-voltage lockout) |
| Propagation Delay | — | Sub-nanosecond class |
| Suhu Kerja | — | -40 C to +125 C |
| Lead-free | — | Yes |
| Input Voltage (VDD) | — | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | — | Approximately 6 V (regulated) |