1EDN7136UXTSA1 vs 1EDN7136GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7136UXTSA1 sa pamamagitan ng Infineon at 1EDN7136GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7136UXTSA1 1EDN7136GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
Bilang ng Outputs 2 (high-side and low-side) —
Peak Source Current 1 A 4 A
Peak Sink Current 2 A 8 A
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Hanay ng Temperature na Operasyon -40 C to +150 C —
Packhaging TSNP-6 with exposed pad (PG-VSON-1) PG-VSON-10-4 (leadless, thermal pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Wala sa Halogen Yes (per Infineon product family convention) —
Level ng MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Product Type — Low-side gate driver IC
Configuration — Single channel, non-inverting
Target Switch — GaN HEMT (CoolGaN) / MOSFET
Input Logic — TTL/CMOS compatible
UVLO — Yes (VDD under-voltage lockout)
Propagation Delay — Sub-nanosecond class
Temperature na Operasyon — -40 C to +125 C
Lead-free — Yes
Input Voltage (VDD) — [DATA_NEEDED: VDD range V]
Output Voltage (GaN gate) — Approximately 6 V (regulated)

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