1EDN7136UXTSA1 vs 1EDN7136GXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7136UXTSA1 disebabkan oleh Infineon dan 1EDN7136GXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7136UXTSA1 1EDN7136GXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
Bilangan Output 2 (high-side and low-side) —
Peak Source Current 1 A 4 A
Peak Sink Current 2 A 8 A
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Gambaran Suhu Operasi -40 C to +150 C —
Kemasan TSNP-6 with exposed pad (PG-VSON-1) PG-VSON-10-4 (leadless, thermal pad)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes (per Infineon product family convention) —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Product Type — Low-side gate driver IC
Configuration — Single channel, non-inverting
Target Switch — GaN HEMT (CoolGaN) / MOSFET
Input Logic — TTL/CMOS compatible
UVLO — Yes (VDD under-voltage lockout)
Propagation Delay — Sub-nanosecond class
Suhu Operasi — -40 C to +125 C
Lead-free — Yes
Input Voltage (VDD) — [DATA_NEEDED: VDD range V]
Output Voltage (GaN gate) — Approximately 6 V (regulated)

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