27C512-10 vs 27C512-25 Perbandingan
Perbandingan bersamaan detil 27C512-10 dari Texas Instruments dan 27C512-25 dari Microchip Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
27C512-10 - 512Kbit (64Kx8) 100ns CMOS EPROM | Texas Instruments
27C512-10 ✗ Akhir HidupPerbandingan Spesifikasi
| Parameter Umum | 27C512-10 | 27C512-25 |
|---|---|---|
| Merek | Texas Instruments | Microchip Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Obsolete |
| Ukuran Memori | 512 Kbit | — |
| Organisasi | 64K x 8 | — |
| Tipe Memori | OTP EPROM (CMOS) | CMOS EPROM (UV / OTP) |
| Access Time (Speed Grade -10) | 100 ns | — |
| Supply Voltage (VCC) | +5 V with +/-10% tolerance | — |
| Programming Voltage (VPP) | +12.5 V | — |
| Standby Current | 20 uA typical (CMOS standby) | — |
| Operating Mode | Totally static operation | Asynchronous |
| Antarmuka | Parallel, TTL compatible | — |
| Address Lines | 15 (A0-A14) | — |
| Data Lines | 8 (Q0-Q7), tri-state outputs | — |
| Control Signals | /E (chip enable), /G (output enable) | — |
| Pinout Standard | JEDEC-approved 28-pin EPROM pinout | JEDEC-approved 28-pin |
| Paket | 28-pin DIP | DIP-28 |
| Tipe Mounting | Through Hole | Through Hole |
| Erase Method | One-Time Programmable (not erasable) | UV (windowed variant) or not erasable (OTP variant) |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Memory Organization | — | 64K x 8 (524,288 bits) |
| Maximum Access Time | — | 250 ns |
| Supply Voltage (Read Mode) | — | 5 V +/- 10% |
| Standby Current (CMOS) | — | 20 uA typical |
| Tipe Output | — | 3-state, common I/O |
| Programming Method | — | High-voltage EPROM programming (Flashrite type) |
| Access Time Guarantee | — | Any byte in less than 250 ns |
| Technology | — | CMOS floating gate |