27C512-10 vs 27C512-25 比較

詳細並排比較 27C512-10 由 Texas Instruments 與 27C512-25 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Microchip Technology
27C512-25 27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 Obsolete

規格比較

參數 27C512-10 27C512-25
品牌 Texas Instruments Microchip Technology
類別 Memory ICs Memory ICs
生命週期狀態 停產終止 Obsolete
記憶體容量 512 Kbit —
組織 64K x 8 —
記憶體類型 OTP EPROM (CMOS) CMOS EPROM (UV / OTP)
Access Time (Speed Grade -10) 100 ns —
Supply Voltage (VCC) +5 V with +/-10% tolerance —
Programming Voltage (VPP) +12.5 V —
Standby Current 20 uA typical (CMOS standby) —
Operating Mode Totally static operation Asynchronous
介面 Parallel, TTL compatible —
Address Lines 15 (A0-A14) —
Data Lines 8 (Q0-Q7), tri-state outputs —
Control Signals /E (chip enable), /G (output enable) —
Pinout Standard JEDEC-approved 28-pin EPROM pinout JEDEC-approved 28-pin
封裝 28-pin DIP DIP-28
安裝類型 Through Hole Through Hole
Erase Method One-Time Programmable (not erasable) UV (windowed variant) or not erasable (OTP variant)
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 狀態 unknown [DATA_NEEDED: RoHS status]
Memory Organization — 64K x 8 (524,288 bits)
Maximum Access Time — 250 ns
Supply Voltage (Read Mode) — 5 V +/- 10%
Standby Current (CMOS) — 20 uA typical
輸出類型 — 3-state, common I/O
Programming Method — High-voltage EPROM programming (Flashrite type)
Access Time Guarantee — Any byte in less than 250 ns
Technology — CMOS floating gate

資料表與資源

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