2ED2103S06FXUMA1 vs IR2104SPBF Perbandingan

Perbandingan bersamaan detil 2ED2103S06FXUMA1 dari Infineon dan IR2104SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED2103S06FXUMA1 IR2104SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver Half-bridge gate driver
Configuration Non-Inverting High and Low Side
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) 2 (high-side + low-side)
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V 3.3 V, 5 V, 15 V CMOS/LSTTL
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Paket PG-DSO-8-69 (DSO-8 with exposed pad) 8-pin SOIC
Tipe Mounting Surface Mount —
Rentang Suhu Kerja -40C to +125C -40 C to +125 C
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant (PBF suffix indicates lead-free)
Input Type — Logic (non-inverting)
Maximum Offset / Bootstrap Supply Voltage — 600 V
Gate Drive Supply Range (VCC) — 10 V to 20 V
Output Source Current — 130 mA typical
Output Sink Current — 270 mA typical
Propagation Delay — 680 ns typical
Waktu naik — 160 ns typical
Waktu Menurun — 60 ns typical
Undervoltage Lockout — Yes (VCC UVLO)
Deadtime — Internally set
Cross-Conduction Prevention — Yes

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