2ED2103S06FXUMA1 vs IR2104SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED2103S06FXUMA1 disebabkan oleh Infineon dan IR2104SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED2103S06FXUMA1 IR2104SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver Half-bridge gate driver
Configuration Non-Inverting High and Low Side
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) 2 (high-side + low-side)
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V 3.3 V, 5 V, 15 V CMOS/LSTTL
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Kemasan PG-DSO-8-69 (DSO-8 with exposed pad) 8-pin SOIC
Jenis Pemasangan Surface Mount —
Gambaran Suhu Operasi -40C to +125C -40 C to +125 C
Aras MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant Compliant (PBF suffix indicates lead-free)
Input Type — Logic (non-inverting)
Maximum Offset / Bootstrap Supply Voltage — 600 V
Gate Drive Supply Range (VCC) — 10 V to 20 V
Output Source Current — 130 mA typical
Output Sink Current — 270 mA typical
Propagation Delay — 680 ns typical
Masa Pertambahan — 160 ns typical
Masa jatuh — 60 ns typical
Undervoltage Lockout — Yes (VCC UVLO)
Deadtime — Internally set
Cross-Conduction Prevention — Yes

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