2ED21834S06JXUMA1 vs IR2011SPBF Perbandingan

Perbandingan bersamaan detil 2ED21834S06JXUMA1 dari Infineon dan IR2011SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED21834S06JXUMA1 IR2011SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration Half-bridge (high-side + low-side) High-Side and Low-Side, Inverting
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Paket PG-DSO-14-49 (DSO-14) 8-SOIC (DSO-8)
Jumlah Pin 14 —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40 °C to +125 °C -40 C to +125 C
Status RoHS Compliant —
Standard Reel Quantity 3000 —
Jumlah Output — 2
Offset Voltage (High-Side, max) — 200 V
Gate Drive Supply Voltage (VCC, VBS) — 10 V to 20 V
Output Source/Sink Current — 1 A / 1 A (typ)
Propagation Delay (typ) — 80 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
Input Logic Compatibility — CMOS / LSTTL, down to 3.0 V
dV/dt Immunity — Yes
Negative Transient Tolerance — Yes (on VS pin)
Lead-Free / RoHS — Yes (PBF suffix)
Tube / Reel Packaging — Tube (per Infineon PBF convention)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon