2ED21834S06JXUMA1 vs IR2011SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED21834S06JXUMA1 disebabkan oleh Infineon dan IR2011SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED21834S06JXUMA1 IR2011SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration Half-bridge (high-side + low-side) High-Side and Low-Side, Inverting
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Kemasan PG-DSO-14-49 (DSO-14) 8-SOIC (DSO-8)
Bilangan Pin 14 —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -40 °C to +125 °C -40 C to +125 C
Status RoHS Compliant —
Standard Reel Quantity 3000 —
Bilangan Output — 2
Offset Voltage (High-Side, max) — 200 V
Gate Drive Supply Voltage (VCC, VBS) — 10 V to 20 V
Output Source/Sink Current — 1 A / 1 A (typ)
Propagation Delay (typ) — 80 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
Input Logic Compatibility — CMOS / LSTTL, down to 3.0 V
dV/dt Immunity — Yes
Negative Transient Tolerance — Yes (on VS pin)
Lead-Free / RoHS — Yes (PBF suffix)
Tube / Reel Packaging — Tube (per Infineon PBF convention)

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