2ED21834S06JXUMA1 vs IR2011SPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2ED21834S06JXUMA1 sa pamamagitan ng Infineon at IR2011SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED21834S06JXUMA1 2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2ED21834S06JXUMA1 IR2011SPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Half-Bridge Gate Driver IC Half-Bridge Gate Driver IC
Configuration Half-bridge (high-side + low-side) High-Side and Low-Side, Inverting
Maximum Offset Voltage (VBS) 650 V —
Typical Sink Current 2.5 A —
Typical Source Current 2.5 A —
Input Logic Non-Inverting —
Integrated Bootstrap Diode Yes —
Technology SOI (Silicon-On-Insulator) high-voltage —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Packhaging PG-DSO-14-49 (DSO-14) 8-SOIC (DSO-8)
Bilang ng Pins 14 —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40 °C to +125 °C -40 C to +125 C
Tindminan RoHS Compliant —
Standard Reel Quantity 3000 —
Bilang ng Outputs — 2
Offset Voltage (High-Side, max) — 200 V
Gate Drive Supply Voltage (VCC, VBS) — 10 V to 20 V
Output Source/Sink Current — 1 A / 1 A (typ)
Propagation Delay (typ) — 80 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
Input Logic Compatibility — CMOS / LSTTL, down to 3.0 V
dV/dt Immunity — Yes
Negative Transient Tolerance — Yes (on VS pin)
Lead-Free / RoHS — Yes (PBF suffix)
Tube / Reel Packaging — Tube (per Infineon PBF convention)

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