BSC019N04LSTATMA1 vs BSC074N15NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC019N04LSTATMA1 dari Infineon dan BSC074N15NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC019N04LSTATMA1 BSC074N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS™ 5 trench
Drain-Source Voltage (VDS) 40 V 150 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm 7.4 mΩ
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V [DATA_NEEDED: VGS(th) typ]
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Rentang Suhu Kerja -55 C to +150 C [DATA_NEEDED: TJ min/max]
Paket TDSON-8 (SuperSO8) 5x6 mm SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 114 A
Power Dissition (PD) at TC=25°C — 214 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Body Diode — Integrated

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