BSC019N04LSTATMA1 vs BSC074N15NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC019N04LSTATMA1 sa pamamagitan ng Infineon at BSC074N15NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSC019N04LSTATMA1 | BSC074N15NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS™ 5 trench |
| Drain-Source Voltage (VDS) | 40 V | 150 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A | — |
| Continuous Drain Current (ID, Ta=25C) | 28 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed ID limit] | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm | 7.4 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | 1.7 V | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge Qg typ | 85 nC | — |
| Power Dissipation PD (Tc=25C) | 94 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | [DATA_NEEDED: TJ min/max] |
| Packhaging | TDSON-8 (SuperSO8) 5x6 mm | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | Yes | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 114 A |
| Power Dissition (PD) at TC=25°C | — | 214 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Body Diode | — | Integrated |