BSC019N04LSTATMA1 vs BSC074N15NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N04LSTATMA1 disebabkan oleh Infineon dan BSC074N15NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC019N04LSTATMA1 BSC074N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS™ 5 trench
Drain-Source Voltage (VDS) 40 V 150 V
Continuous Drain Current (ID, Tc=25C) 161 A —
Continuous Drain Current (ID, Ta=25C) 28 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] —
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm 7.4 mΩ
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) typ 1.7 V [DATA_NEEDED: VGS(th) typ]
Total Gate Charge Qg typ 85 nC —
Power Dissipation PD (Tc=25C) 94 W —
Gambaran Suhu Operasi -55 C to +150 C [DATA_NEEDED: TJ min/max]
Kemasan TDSON-8 (SuperSO8) 5x6 mm SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated Yes —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 114 A
Power Dissition (PD) at TC=25°C — 214 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Body Diode — Integrated

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