BSS126H6327XTSA2 vs SS0530 Perbandingan

Perbandingan bersamaan detil BSS126H6327XTSA2 dari Infineon dan SS0530 dari Panjit. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS126H6327XTSA2 SS0530
Merek Infineon Panjit
Kategori MOSFETs Diodes
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode —
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
Paket SOT-23-3 (PG-SOT23) SOD-123
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction, typical) —
Jumlah Pin 3 —
Configuration Single Single
Channel Mode Depletion (normally-on at VGS = 0) —
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant (Pb-free matte tin finish)
Lead-Free Yes —
Bebas Halogen Yes (Infineon 'green' package) —
Manufacturer — Panjit International Inc.
Part Number — SS0530 (ordering code SS0530_R1_00001)
Device Type — Schottky Barrier Diode
Maximum Repetitive Peak Reverse Voltage (VRRM) — 30 V
Maximum DC Blocking Voltage (VR) — 30 V
Maximum Average Rectified Forward Current (IF(AV)) — 0.5 A
Non-Repetitive Peak Forward Surge Current (IFSM) — 5.0 A
Forward Voltage Drop (Vf) — [DATA_NEEDED: Vf at rated IF]
Reverse Leakage Current (IR) — [DATA_NEEDED: IR at rated VR]
Rentang Suhu Hubung Kerja — -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet)
Storage Temperature Range — -55 C to +150 C (typical)
Diode Family / Part Series — SS0520-SS0540 (Low-Vf Schottky)
Packaging — Tape and Reel (R1)

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