BSS126H6327XTSA2 vs SS0530 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS126H6327XTSA2 disebabkan oleh Infineon dan SS0530 disebabkan oleh Panjit. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS126H6327XTSA2 SS0530
Merek Infineon Panjit
Kategori MOSFETs Diodes
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode —
Drain-Source Voltage (VDS) Max 600 V —
Continuous Drain Current (ID) at Ta 21 mA —
Power Dissipation (PD) at Ta 500 mW —
On-Resistance (RDS(on)) Max 500 ohm (typical for depletion-mode) —
Gate-Source Voltage (VGS) Range [DATA_NEEDED: VGS max/min] —
Technology SIPMOS (DMOS) —
Kemasan SOT-23-3 (PG-SOT23) SOD-123
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction, typical) —
Kiraan Pin 3 —
Configuration Single Single
Channel Mode Depletion (normally-on at VGS = 0) —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant (Pb-free matte tin finish)
Lead-Free Yes —
Boson Bebas Yes (Infineon 'green' package) —
Manufacturer — Panjit International Inc.
Part Number — SS0530 (ordering code SS0530_R1_00001)
Device Type — Schottky Barrier Diode
Maximum Repetitive Peak Reverse Voltage (VRRM) — 30 V
Maximum DC Blocking Voltage (VR) — 30 V
Maximum Average Rectified Forward Current (IF(AV)) — 0.5 A
Non-Repetitive Peak Forward Surge Current (IFSM) — 5.0 A
Forward Voltage Drop (Vf) — [DATA_NEEDED: Vf at rated IF]
Reverse Leakage Current (IR) — [DATA_NEEDED: IR at rated VR]
Gambaran Suhu Hubungan Operasi — -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet)
Storage Temperature Range — -55 C to +150 C (typical)
Diode Family / Part Series — SS0520-SS0540 (Low-Vf Schottky)
Packaging — Tape and Reel (R1)

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