BSS127H6327XTSA2 vs BSS87H6327FTSA1 Perbandingan

Perbandingan bersamaan detil BSS127H6327XTSA2 dari Infineon dan BSS87H6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS127H6327XTSA2 BSS87H6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode N-Channel enhancement-mode
Drain-Source Voltage (VDS) 600 V 240 V
Continuous Drain Current (ID) 21 mA (Ta) 260 mA (Ta)
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) [DATA_NEEDED: VGS(th) typical/min/max]
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubung Kerja -55 C to +150 C —
Paket SOT-23-3 (PG-SOT23) PG-SOT89-4-2 (SOT-89)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 3 (Gate / Drain / Source)
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant (lead-free) Compliant
Bebas Halogen Yes, per IEC 61249-2-21 —
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Power Dissipation (PD) — 1 W (Ta)
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
Gate-Source Voltage (VGS) — +/-20 V
Rentang Suhu Kerja — -55C to +150C (junction)
Lead-Free / Pb-Free — Yes (Pb-free plating)
Process Technology — Vertical DMOS

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