BSS127H6327XTSA2 vs BSS87H6327FTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS127H6327XTSA2 disebabkan oleh Infineon dan BSS87H6327FTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS127H6327XTSA2 BSS87H6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode N-Channel enhancement-mode
Drain-Source Voltage (VDS) 600 V 240 V
Continuous Drain Current (ID) 21 mA (Ta) 260 mA (Ta)
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) [DATA_NEEDED: VGS(th) typical/min/max]
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan SOT-23-3 (PG-SOT23) PG-SOT89-4-2 (SOT-89)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 3 (Gate / Drain / Source)
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant (lead-free) Compliant
Boson Bebas Yes, per IEC 61249-2-21 —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Power Dissipation (PD) — 1 W (Ta)
Drain-Source On-Resistance (RDS(on)) — 6 ohm max at VGS=10V
Gate-Source Voltage (VGS) — +/-20 V
Gambaran Suhu Operasi — -55C to +150C (junction)
Lead-Free / Pb-Free — Yes (Pb-free plating)
Process Technology — Vertical DMOS

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