BSS606NH6327XTSA1 vs BSL606SNH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS606NH6327XTSA1 dari Infineon dan BSL606SNH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS606NH6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Small Signal/Power | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) | 3.2 A (Ta) | — |
| Power Dissipation (PD) | 1 W (Ta) | — |
| On-Resistance (RDS(on)) | 60 mΩ max @ VGS=10 V | — |
| Paket | PG-SOT-89 (TO-243AA) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/min] |
| Suhu Hubung Kerja | -55°C to +150°C | — |
| Qualification | Automotive (per family page) | AEC-Q101 (Automotive) |
| Status RoHS | Compliant | Compliant (Pb-free plating) |
| Lead-Free | Yes | — |
| Level MSL | 1 (per SOT-89 family standard) | 1 (per JEDEC J-STD-020) |
| Reel Quantity | 1000 pcs | — |
| Technology | — | OptiMOS3 trench MOSFET |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| Rentang Suhu Kerja | — | -55C to +150C (Tj) |