BSS606NH6327XTSA1 vs BSL606SNH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS606NH6327XTSA1 sa pamamagitan ng Infineon at BSL606SNH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon
BSL606SNH6327XTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSS606NH6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Small Signal/Power | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) | 3.2 A (Ta) | — |
| Power Dissipation (PD) | 1 W (Ta) | — |
| On-Resistance (RDS(on)) | 60 mΩ max @ VGS=10 V | — |
| Packhaging | PG-SOT-89 (TO-243AA) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/min] |
| Temperature ng Junction na Operasyon | -55°C to +150°C | — |
| Qualification | Automotive (per family page) | AEC-Q101 (Automotive) |
| Tindminan RoHS | Compliant | Compliant (Pb-free plating) |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (per SOT-89 family standard) | 1 (per JEDEC J-STD-020) |
| Reel Quantity | 1000 pcs | — |
| Technology | — | OptiMOS3 trench MOSFET |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (Tj) |