BSS606NH6327XTSA1 vs BSL606SNH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS606NH6327XTSA1 disebabkan oleh Infineon dan BSL606SNH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS606NH6327XTSA1 BSL606SNH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS Small Signal/Power —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) 3.2 A (Ta) —
Power Dissipation (PD) 1 W (Ta) —
On-Resistance (RDS(on)) 60 mΩ max @ VGS=10 V —
Kemasan PG-SOT-89 (TO-243AA) PG-TSOP6-6 (6-pin, SOT-23-6 compatible)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical/min]
Suhu Hubungan Operasi -55°C to +150°C —
Qualification Automotive (per family page) AEC-Q101 (Automotive)
Status RoHS Compliant Compliant (Pb-free plating)
Lead-Free Yes —
Aras MSL 1 (per SOT-89 family standard) 1 (per JEDEC J-STD-020)
Reel Quantity 1000 pcs —
Technology — OptiMOS3 trench MOSFET
Continuous Drain Current (ID) at Ta — 4.5 A
Static Drain-Source On-Resistance (RDS(on)) — 60 mOhm (max, VGS = 10 V)
Total Power Dissipation (PD) at Ta — 2 W
Gate-Source Voltage (VGS) — +/-20 V (max)
Total Gate Charge (Qg) — 5.6 nC (max)
Gambaran Suhu Operasi — -55C to +150C (Tj)

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