BTS3118NHUMA1 vs BSL606SNH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BTS3118NHUMA1 dari Infineon dan BSL606SNH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BTS3118NHUMA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Switch Type | Low-Side Power Switch | — |
| Konfigurasi Output | 1:1 | — |
| Jumlah Output | 1 | — |
| Continuous Drain Current | 2.17 A | — |
| Operating Voltage (Vbb) | 6 V to 18 V nominal (overvoltage protected) | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) at 25C] | — |
| Input Logic Level | Logic-level (3.3 V / 5 V MCU compatible) | — |
| Input Protection | ESD protected | — |
| Thermal Protection | Thermal shutdown with latch | — |
| Fault Protection | Overload, short-circuit, overvoltage, current limit | — |
| Paket | PG-SOT223-4 | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40 C to +150 C junction | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Process Technology | Smart SIPMOS (vertical N-channel) | — |
| Tipe Transistor | — | N-Channel MOSFET (Enhancement Mode) |
| Technology | — | OptiMOS3 trench MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| Rentang Suhu Kerja | — | -55C to +150C (Tj) |
| Qualification | — | AEC-Q101 (Automotive) |
| Status RoHS | — | Compliant (Pb-free plating) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |