BTS3118NHUMA1 vs BSL606SNH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BTS3118NHUMA1 sa pamamagitan ng Infineon at BSL606SNH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BTS3118NHUMA1 BTS3118NHUMA1 - 2.17A Smart Low-Side Switch | Infineon

BTS3118NHUMA1 - 2.17A Smart Low-Side Switch | Infineon

BTS3118NHUMA1 ✓ Nakahanda
Infineon
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BTS3118NHUMA1 BSL606SNH6327XTSA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Switch Type Low-Side Power Switch —
Output Kumpigurasyon 1:1 —
Bilang ng Outputs 1 —
Continuous Drain Current 2.17 A —
Operating Voltage (Vbb) 6 V to 18 V nominal (overvoltage protected) —
On-State Resistance (RDS(on)) [DATA_NEEDED: typical RDS(on) at 25C] —
Input Logic Level Logic-level (3.3 V / 5 V MCU compatible) —
Input Protection ESD protected —
Thermal Protection Thermal shutdown with latch —
Fault Protection Overload, short-circuit, overvoltage, current limit —
Packhaging PG-SOT223-4 PG-TSOP6-6 (6-pin, SOT-23-6 compatible)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -40 C to +150 C junction —
RoHS Compliance Green product, RoHS compliant —
Process Technology Smart SIPMOS (vertical N-channel) —
Uri ng Transistor — N-Channel MOSFET (Enhancement Mode)
Technology — OptiMOS3 trench MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 4.5 A
Static Drain-Source On-Resistance (RDS(on)) — 60 mOhm (max, VGS = 10 V)
Total Power Dissipation (PD) at Ta — 2 W
Gate-Source Voltage (VGS) — +/-20 V (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
Total Gate Charge (Qg) — 5.6 nC (max)
Hanay ng Temperature na Operasyon — -55C to +150C (Tj)
Qualification — AEC-Q101 (Automotive)
Tindminan RoHS — Compliant (Pb-free plating)
Level ng MSL — 1 (per JEDEC J-STD-020)

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