BTS3118NHUMA1 vs BSL606SNH6327XTSA1 比較
詳細並排比較 BTS3118NHUMA1 由 Infineon 與 BSL606SNH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BTS3118NHUMA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Switch Type | Low-Side Power Switch | — |
| 輸出配置 | 1:1 | — |
| 輸出數量 | 1 | — |
| Continuous Drain Current | 2.17 A | — |
| Operating Voltage (Vbb) | 6 V to 18 V nominal (overvoltage protected) | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) at 25C] | — |
| Input Logic Level | Logic-level (3.3 V / 5 V MCU compatible) | — |
| Input Protection | ESD protected | — |
| Thermal Protection | Thermal shutdown with latch | — |
| Fault Protection | Overload, short-circuit, overvoltage, current limit | — |
| 封裝 | PG-SOT223-4 | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40 C to +150 C junction | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Process Technology | Smart SIPMOS (vertical N-channel) | — |
| 電晶體類型 | — | N-Channel MOSFET (Enhancement Mode) |
| Technology | — | OptiMOS3 trench MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| 工作溫度範圍 | — | -55C to +150C (Tj) |
| Qualification | — | AEC-Q101 (Automotive) |
| RoHS 狀態 | — | Compliant (Pb-free plating) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |