BTS3118NHUMA1 vs BSL606SNH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BTS3118NHUMA1 disebabkan oleh Infineon dan BSL606SNH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BTS3118NHUMA1 BSL606SNH6327XTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Switch Type Low-Side Power Switch —
Konfigurasi Output 1:1 —
Bilangan Output 1 —
Continuous Drain Current 2.17 A —
Operating Voltage (Vbb) 6 V to 18 V nominal (overvoltage protected) —
On-State Resistance (RDS(on)) [DATA_NEEDED: typical RDS(on) at 25C] —
Input Logic Level Logic-level (3.3 V / 5 V MCU compatible) —
Input Protection ESD protected —
Thermal Protection Thermal shutdown with latch —
Fault Protection Overload, short-circuit, overvoltage, current limit —
Kemasan PG-SOT223-4 PG-TSOP6-6 (6-pin, SOT-23-6 compatible)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40 C to +150 C junction —
RoHS Compliance Green product, RoHS compliant —
Process Technology Smart SIPMOS (vertical N-channel) —
Jenis Transistor — N-Channel MOSFET (Enhancement Mode)
Technology — OptiMOS3 trench MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta — 4.5 A
Static Drain-Source On-Resistance (RDS(on)) — 60 mOhm (max, VGS = 10 V)
Total Power Dissipation (PD) at Ta — 2 W
Gate-Source Voltage (VGS) — +/-20 V (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
Total Gate Charge (Qg) — 5.6 nC (max)
Gambaran Suhu Operasi — -55C to +150C (Tj)
Qualification — AEC-Q101 (Automotive)
Status RoHS — Compliant (Pb-free plating)
Aras MSL — 1 (per JEDEC J-STD-020)

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