CGD65A055S2 vs CGD65C025SP2 Perbandingan

Perbandingan bersamaan detil CGD65A055S2 dari Cambridge GaN Devices dan CGD65C025SP2 dari Cambridge GaN Devices. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Cambridge GaN Devices
CGD65C025SP2 CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices

CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices

CGD65C025SP2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum CGD65A055S2 CGD65C025SP2
Merek Cambridge GaN Devices Cambridge GaN Devices
Kategori Transistors MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Cambridge GaN Devices Cambridge GaN Devices (CGD)
Technology GaN-on-Si HEMT (enhancement mode) —
Drain-to-Source Voltage (VDS) 650 V —
On-Resistance (RDS(on)) 55 mΩ —
Arus Alir Berlanjut (TC=25°C) 27 A —
Gate Technology ICeGaN™ (standard-driver compatible) ICeGaN® (no negative gate supply required)
Current Sense Pin Yes (integrated CS output) —
Integrated Protection Circuit NL³ (non-linear low-loss) —
Reverse Recovery Charge (Qrr) 0 nC (zero, typical for GaN) —
Paket 16-pin DFN 8x8 mm BHDFN-9-1 (surface-mount, wettable flank)
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement-mode (normally-off) Enhancement mode (normally-off)
Status RoHS Compliant (lead-free) [DATA_NEEDED: RoHS compliance status]
Polarity Single FET —
Part Number — CGD65C025SP2
Tipe Transistor — N-Channel GaN HEMT (enhancement-mode, normally-off)
Drain-Source Voltage (V_DS max) — 650 V
Continuous Drain Current (I_D) — 60 A
On-Resistance (R_DS(on)) — 25 mΩ (typical)
Configuration — Single N-Channel
Material — GaN-on-Si (Gallium Nitride on Silicon)
Switching Frequency Suitability — High frequency (fast turn-on, easy paralleling)
Datasheet Status — Preliminary (May 2024)
AEC-Q100 Qualification — unknown

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