CGD65A055S2 vs CGD65C025SP2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng CGD65A055S2 sa pamamagitan ng Cambridge GaN Devices at CGD65C025SP2 sa pamamagitan ng Cambridge GaN Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ NakahandaCambridge GaN Devices
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
CGD65C025SP2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | CGD65A055S2 | CGD65C025SP2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorya | Transistors | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Technology | GaN-on-Si HEMT (enhancement mode) | — |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| Patuloy na Drain Current (TC=25°C) | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | ICeGaN® (no negative gate supply required) |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| Packhaging | 16-pin DFN 8x8 mm | BHDFN-9-1 (surface-mount, wettable flank) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement mode (normally-off) |
| Tindminan RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS compliance status] |
| Polarity | Single FET | — |
| Part Number | — | CGD65C025SP2 |
| Uri ng Transistor | — | N-Channel GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (V_DS max) | — | 650 V |
| Continuous Drain Current (I_D) | — | 60 A |
| On-Resistance (R_DS(on)) | — | 25 mΩ (typical) |
| Configuration | — | Single N-Channel |
| Material | — | GaN-on-Si (Gallium Nitride on Silicon) |
| Switching Frequency Suitability | — | High frequency (fast turn-on, easy paralleling) |
| Datasheet Status | — | Preliminary (May 2024) |
| AEC-Q100 Qualification | — | unknown |