CGD65A055S2 vs CGD65C025SP2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci CGD65A055S2 disebabkan oleh Cambridge GaN Devices dan CGD65C025SP2 disebabkan oleh Cambridge GaN Devices. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ AktifCambridge GaN Devices
CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
CGD65C025SP2 ✓ AktifPengandingan Spesifikasi
| Parametr | CGD65A055S2 | CGD65C025SP2 |
|---|---|---|
| Merek | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | Transistors | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices (CGD) |
| Technology | GaN-on-Si HEMT (enhancement mode) | — |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| Arus Kumpal Tetap (TC=25°C) | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | ICeGaN® (no negative gate supply required) |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| Kemasan | 16-pin DFN 8x8 mm | BHDFN-9-1 (surface-mount, wettable flank) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement mode (normally-off) |
| Status RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS compliance status] |
| Polarity | Single FET | — |
| Part Number | — | CGD65C025SP2 |
| Jenis Transistor | — | N-Channel GaN HEMT (enhancement-mode, normally-off) |
| Drain-Source Voltage (V_DS max) | — | 650 V |
| Continuous Drain Current (I_D) | — | 60 A |
| On-Resistance (R_DS(on)) | — | 25 mΩ (typical) |
| Configuration | — | Single N-Channel |
| Material | — | GaN-on-Si (Gallium Nitride on Silicon) |
| Switching Frequency Suitability | — | High frequency (fast turn-on, easy paralleling) |
| Datasheet Status | — | Preliminary (May 2024) |
| AEC-Q100 Qualification | — | unknown |