H5AN4G8NBJR-VKC vs H5AN4G8NBJR-RDC Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-VKC dari SK hynix dan H5AN4G8NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-VKC | H5AN4G8NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Laju Data | 2666 Mbps (DDR4-2666) | [DATA_NEEDED: speed grade Mbps] |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Paket | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency for 2666 grade] | — |
| Refresh | [DATA_NEEDED: refresh rate] | Auto-refresh and self-refresh |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | Lead-Free & Halogen-Free (RoHS Compliant) |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Antarmuka | — | DDR4 (Double Data Rate IV) |
| Tegangan Pemuat | — | [DATA_NEEDED: VDD supply voltage] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |