H5AN4G8NBJR-VKC vs H5AN4G8NBJR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN4G8NBJR-VKC disebabkan oleh SK hynix dan H5AN4G8NBJR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN4G8NBJR-VKC | H5AN4G8NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| Kadar Data | 2666 Mbps (DDR4-2666) | [DATA_NEEDED: speed grade Mbps] |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Kemasan | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency for 2666 grade] | — |
| Refresh | [DATA_NEEDED: refresh rate] | Auto-refresh and self-refresh |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) | Lead-Free & Halogen-Free (RoHS Compliant) |
| Packaging | Tray | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 4 Gbit |
| Organisasi | — | 512M x 8 |
| Antaramuka | — | DDR4 (Double Data Rate IV) |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: VDD supply voltage] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |