H5AN4G8NBJR-VKC vs H5AN4G8NBJR-RDC 比較
詳細並排比較 H5AN4G8NBJR-VKC 由 SK hynix 與 H5AN4G8NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G8NBJR-VKC | H5AN4G8NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| 資料速率 | 2666 Mbps (DDR4-2666) | [DATA_NEEDED: speed grade Mbps] |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封裝 | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency for 2666 grade] | — |
| Refresh | [DATA_NEEDED: refresh rate] | Auto-refresh and self-refresh |
| RoHS 狀態 | Compliant (Lead-Free & Halogen-Free per datasheet) | Lead-Free & Halogen-Free (RoHS Compliant) |
| Packaging | Tray | — |
| 生命週期狀態 | Active | — |
| Density | — | 4 Gbit |
| 組織 | — | 512M x 8 |
| 介面 | — | DDR4 (Double Data Rate IV) |
| 供應電壓 | — | [DATA_NEEDED: VDD supply voltage] |
| Bank Architecture | — | 8 banks with 4 bank groups (x8) |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Termination | — | On-Die Termination (ODT) |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |